Description
Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in aceramic / metal flange package.
Features
■High Efficiency and Linear Gain Operation
■Negative Gate Voltage and Bias Sequencing Required
■Excellent Thermal Stability and Excellent Ruggedness
■Metal Based Package Sealed with Ceramic-Epoxy Lid
■Gold Metallization System: Chip-Wire Bond-Package
Table2. Maximum Ratings
Table3. Electrical Characteristics
DC BIAS SEQUENCING
Packaging Diagram
Flanged Ceramic Package(YP01401650T)
