Description
Innotion’s YP013017120T is a 120-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 3000MHz. The transistor is supplied in a ceramic/metal flange package.
Features
■High Efficiency and Linear Gain Operation
■Negative Gate Voltage and Bias Sequencing Required
■Excellent Thermal Stability and Excellent Ruggedness
■Metal Based Package Sealed with Ceramic-Epoxy Lid
■Gold Metallization System: Chip-Wire Bond-Package
Table2. Maximum Ratings
Table3. Electrical Characteristics
DC BIAS SEQUENCING
Packaging Diagram
Flanged Ceramic Package(YP013017120T)
