YPM06601030M GaNRF Power Amplifer

1. Product Introduction

1.1 Features

  • Suitable for linear and saturation applications
  • Pout=30W, CW
  • Freq Range:0.6-6.0GHz
  • Typical VDS:28 V
  • Negative Gate Voltage and Bias Sequencing Required
  • Excellent Thermal Stability and Excellent Ruggedness
  • 100% RF tested
  • RoHS

1.2 Description

YPM06601030M is a 80-watt, internally 50ohm matched GaN HEMT, designed specifically with high efficiency, high stability and wide bandwidth capabilities, which makes the YPM06601030M  ideal for 600MHz~6000MHz, CW amplifier applications.

1.3 Typical Performance1,2

2. Maximum Ratings

3.Thermal Characteristics

4. Electrical Characteristics (TA = 25℃)

4.1 DC Characteristics

4.2 RF CharacteristicsTypical1

4.3 Load Mismatch

5. Packaging Diagram

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