Description
Innotion’s YP601530T is a 30-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz, especially for 4000-6000MHz. The transistor is supplied inaceramic & metal flange
Typical Performance (Tc=25℃) of Demonstration Amplifier
Features
■High Efficiency and Linear Gain Operation
■Negative Gate Voltage and Bias Sequencing Required
■Excellent Thermal Stability and Excellent Ruggedness
■Metal Based Package Sealed with Ceramic-Epoxy Lid
■Gold Metallization System: Chip-Wire Bond-Package
Table2. Maximum Ratings
Table3. Electrical Characteristics
DC BIAS SEQUENCING
Packaging Diagram
Flanged Ceramic Package; 2leads(YP601530T)
Pin Definition
Earless Ceramic Package; 2leads(YP601530TS)
Pin Definition
