YPM206208100M GaNRF Power Amplifer

1.Product Introduction

1.1 Features

• Suitable for linear and saturation applications
• Pout=100W, CW
• Freq Range：2.0-6.2GHz
• Typical VDS：28 V
• Negative Gate Voltage and Bias Sequencing Required
• Excellent Thermal Stability and Excellent Ruggedness
• 100% RF tested
• RoHS

1.2 Description

YPM206208100M is a 100-watt, internally 50ohm matched GaN HEMT, designed specifically with high efficiency, high stability and wide bandwidth capabilities, which makes the YPM206208100M ideal for 2000MHz~6200MHz, CW amplifier applications.

1.3 Typical Performance¹

2. Maximum Ratings

3. Thermal Characteristics

4. Electrical Characteristics （TA = 25℃）

4.1 DC Characteristics

4.2 RF Characteristics （Typical¹）

4.3 Load Mismatch

5.1 PCB Layout

6. Packaging Diagram