Description
Innotion’s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a ceramic /metal flange package.
Typical Performance (Tc=25℃) of Demonstration Amplifier
Features
■High Efficiency and Linear Gain Operation
■Negative Gate Voltage and Bias Sequencing Required
■Excellent Thermal Stability and Excellent Ruggedness
■Metal Based Package Sealed with Ceramic-Epoxy Lid
■Gold Metallization System: Chip-Wire Bond-Package
Table2. Maximum Ratings
Table3. Electrical Characteristics
DC BIAS SEQUENCING
Packaging Diagram
Flanged Ceramic Package; 2 leads(YP601820T)
Pin Definition
Earless Ceramic Package; 2 leads(YP601820TS)
Pin Definition
