Product Specifications
- Part Number:MRF177
- Description:The RF MOSFET Line 100W, 400MHz, 28V
- Min Frequency(MHz):5
- Max Frequency(MHz):400
- Bias Voltage(V):28.0
- Pout(W):100.00
- Gain(dB):12.00
- Efficiency(%):60
- Type:TMOS
- Package:Flange Ceramic Pkg
- Package Category:Ceramic Flange Mount
-
Features
- N–Channel Enhancement Mode MOSFET
- Excellent Thermal Stability; Suited for Class A Operation
- Nitride Passivated Die for Enhanced Reliability
- Ruggedness Tested at Rated Output Power
- Low Crss — 10 pF typ. @ VDS = 28 V
- Low Thermal Resistance
- Typical Performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
Applications
- Aerospace and Defense
- ISM
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
